منابع مشابه
Heavy-ion induced desorption of cryogenic surfaces
Heavy-ion induced desorption of cryogenic surfaces E. Mahner 1 , L. Evans 1 , M. Bender 2,# , D. Severin 2 , H. Kollmus 2 , M. Wengenroth 2 1 CERN, 1211 Geneva 23, Switzerland; 2 GSI, 64291 Darmstadt, Germany Introduction Ion-induced desorption is a severe luminosity limitation of low charge state heavy-ion accelerators. Studying the phenomena for almost 10 years using different target material...
متن کاملDynamical approach to heavy ion-induced fission
Deep inelastic collisions (DICs) can compete strongly with fusion in collisions of heavy nuclei. However, standard coupled-channels calculations do not take DIC process into account. As a result, calculations have been shown to overestimate the fusion cross-section and thus lead to a discrepancy between experimental data and theoretical calculations, particularly at energies above the fusion ba...
متن کاملStructure of neutron rich palladium isotopes produced in heavy ion induced ssion
1 CEA/SACLAY, DAPNIA/SPhN, F-91191 Gif sur Yvette, France 2 CSNSM, CNRS-IN2P3 et Universit e de Paris-Sud, F-91405 Orsay, France 3 CEA/DIF, DPTA/SPN, F-91680 Bruy eres-le-Châtel, France 4 CENBG, Domaine du Haut Vigneau, F-33175 Gradignan, France 5 IPNL, 43, Boulevard du 11 novembre 1918, F-69622 Villeurbanne, France 6 Department of Physics and Astronomy, Univ. of Manchester, M13 9PL, United Kin...
متن کاملFine structure in swift heavy ion tracks in amorphous SiO2.
We report on the observation of a fine structure in ion tracks in amorphous SiO2 using small angle x-ray scattering measurements. Tracks were generated by high energy ion irradiation with Au and Xe between 27 MeV and 1.43 GeV. In agreement with molecular dynamics simulations, the tracks consist of a core characterized by a significant density deficit compared to unirradiated material, surrounde...
متن کاملGate Tunnel Current in an MOS Transistor
A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.
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ژورنال
عنوان ژورنال: Electronics and Communications in Japan (Part II: Electronics)
سال: 2006
ISSN: 8756-663X,1520-6432
DOI: 10.1002/ecjb.20274